8 March 2017 The conditions for femtosecond laser melting of silicon under two different models
Author Affiliations +
Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554G (2017) https://doi.org/10.1117/12.2268354
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
An investigation of silicon melting occurring under femtosecond laser irradiation has been presented, The two-temperature model and photoionization model are introduced to calculate the free-carrier intensity’s evolution with time. In both models, the electrons density’s evolution under laser fluence F0 = 0.2 ,0.3, 0.5J / cm2 are performed. The maximum density reaching the threshold density for SPP excitation by these two model are discussed. For both single pulse and double pulse, according to the simulation data, the two temperature model have a more agreement with the experiment results.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhi-ming Li, Zhi-ming Li, Xi Wang, Xi Wang, Jin-song Nie, Jin-song Nie, } "The conditions for femtosecond laser melting of silicon under two different models", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554G (8 March 2017); doi: 10.1117/12.2268354; https://doi.org/10.1117/12.2268354
PROCEEDINGS
8 PAGES


SHARE
Back to Top