8 March 2017 Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554R (2017) https://doi.org/10.1117/12.2268433
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.
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Huiqun Zhu, Lekang Li, Chunbo Li, "Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554R (8 March 2017); doi: 10.1117/12.2268433; https://doi.org/10.1117/12.2268433
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