8 March 2017 Electronic structure and optical properties of P-doped GaAs film
Author Affiliations +
Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554V (2017) https://doi.org/10.1117/12.2268502
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
The electronic structure and optical properties of pure and P-doped cubic-blende gallium arsenide (GaAs) for different P constants (x=0, 0.125, 0.25, 0.375) have been studied by the first-principles projected augmented plane potential approach based on the density functional theory and the generalized gradient approximation method. It shows that the P-doped material has a smaller lattice constant, which resulted in a local lattice distortion. The minimum of the conduction band moves to high energy level and the band gaps gradually become wide with gradual increase concentration of P impurity. The dielectric function are calculated based on Kramers-Kroning relations. The optical property studied from the calculated absorption coefficients shows that the adsorption peaks change obviously in the visible light wavelength area for the P-doped GaAs system.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HongLi Shi, HongLi Shi, Bin Ren, Bin Ren, HongChang Cheng, HongChang Cheng, XiaoJun Yang, XiaoJun Yang, } "Electronic structure and optical properties of P-doped GaAs film", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554V (8 March 2017); doi: 10.1117/12.2268502; https://doi.org/10.1117/12.2268502
PROCEEDINGS
5 PAGES


SHARE
Back to Top