8 March 2017 Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554Y (2017) https://doi.org/10.1117/12.2268546
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
The flawed surface of GaAs/GaAlAs heterointerface after wet etching by H2O2 and NH4OH based etch ant was studied in this work. The results showed that the surface of GaAs/GaAlAs heterointerface had convex point, etching pits, pinhole, fog point, and friction scratches were investigated with a etch step measurement. And imprinting the main reasons for the formation of the etching surface defects of GaAs/GaAlAs are the poor quality of epitaxial materials, the contamination of materials surface, the unclear interface of oxidation and doping, the inhomogeneity of concentration and the operation errors. The selective etching of the GaAs/GaAlAs material eliminates some flaws and improves the quality of the etching surface of the GaAs/GaAlAs material.
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Hongjin Qiu, Hongjin Qiu, Canglu Hu, Canglu Hu, Chaxia Peng, Chaxia Peng, Kai Qiao, Kai Qiao, Xin Guo, Xin Guo, Xuchuan Liu, Xuchuan Liu, } "Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554Y (8 March 2017); doi: 10.1117/12.2268546; https://doi.org/10.1117/12.2268546
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