28 February 2017 Research on transmission high sensitivity GaAs cathode of low light level image devices
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Proceedings Volume 10256, Second International Conference on Photonics and Optical Engineering; 102563H (2017) https://doi.org/10.1117/12.2257817
Event: Second International Conference on Photonics and Optical Engineering, 2016, Xi'an, China
Abstract
To strive for the goal of further improving the overall performance of low-light-level Gen.Ⅲ image intensifier tube, modifications and innovations in the making of GaAs photocathode are already underway revolving around the basis of existing research, through which the sensitivity of GaAs photocathode is considerably improved from 1200μA/lm to above 1800μA/lm, 2000μA/lm (typical value), and it won’t drop within the 1000hrs’ storage inside the station according to the experiment on the photoemission stability of high-sensitivity GaAs photocathode. In short, highly distinguished characteristics of high sensitivity GaAs photocathode like wide response range, superior quantum efficiency and 1.06μm infrared response wavelength, promise its remarkable significance in both the enhancement of the overall performance and the prolongation of the operational life-span of low-lightlevel Gen.Ⅲ image intensifier tube.
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Ke Xu, Kunye Han, Jiangtao Xu, "Research on transmission high sensitivity GaAs cathode of low light level image devices", Proc. SPIE 10256, Second International Conference on Photonics and Optical Engineering, 102563H (28 February 2017); doi: 10.1117/12.2257817; https://doi.org/10.1117/12.2257817
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