28 February 2017 Numerical study of the light output intensity of the bilayer organic light-emitting diodes
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Proceedings Volume 10256, Second International Conference on Photonics and Optical Engineering; 102565M (2017) https://doi.org/10.1117/12.2251253
Event: Second International Conference on Photonics and Optical Engineering, 2016, Xi'an, China
Abstract
The structure of organic light-emitting diodes (OLEDs) is one of most important issues that influence the light output intensity (LOI) of OLEDs. In this paper, based on a simple but accurate optical model, the influences of hole and electron transport layer thickness on the LOI of bilayer OLEDs, which with N,N0- bis(naphthalen-1-yl)-N,N0- bis(phenyl)- benzidine (NPB) or N,N′- diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4-diamine (TPD) as hole transport layer, with tris(8-hydroxyquinoline) aluminum (Alq3) as electron transport and light emitting layers, were investigated. The laws of LOI for OLEDs under different organic layer thickness values were obtained. The results show that the LOI of devices varies in accordance with damped cosine or sine function as the increasing of organic layer thickness, and the results show that the bilayer OLEDs with the structure of Glass/ITO/NPB (55 nm)/Alq3 (75 nm)/Al and Glass/ITO/TPB (60 nm)/Alq3 (75 nm)/Al have most largest LOI. When the thickness of Alq3 is less than 105 nm, the OLEDs with TPD as hole transport layer have larger LOI than that with NPB as hole transport layer. The results obtained in this paper can present an in-depth understanding of the working mechanism of OLEDs and help ones fabricate high efficiency OLEDs.
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Feiping Lu, "Numerical study of the light output intensity of the bilayer organic light-emitting diodes", Proc. SPIE 10256, Second International Conference on Photonics and Optical Engineering, 102565M (28 February 2017); doi: 10.1117/12.2251253; https://doi.org/10.1117/12.2251253
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