28 January 1993 Recent progress in atomic layer epitaxy
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Proceedings Volume 10267, Integrated Optics and Optoelectronics: A Critical Review; 1026702 (1993) https://doi.org/10.1117/12.141398
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Atomic layer epitaxy continues to emerge as a promising epitaxial technique when atomic layer thickness control is required in semiconductors device structures. However, ALE still faces several problems such as low growth rate, relatively high carbon background and difficulties in growing high bandgap ternary alloys. This paper will outline recent progress in these areas illustrated by the state-of-art devices recently grown by the ALE technique.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Bedair, S. M. Bedair, } "Recent progress in atomic layer epitaxy", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 1026702 (28 January 1993); doi: 10.1117/12.141398; https://doi.org/10.1117/12.141398


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