Atomic layer epitaxy continues to emerge as a promising epitaxial technique when atomic layer thickness control is required in semiconductors device structures. However, ALE still faces several problems such as low growth rate, relatively high carbon background and difficulties in growing high bandgap ternary alloys. This paper will outline recent progress in these areas illustrated by the state-of-art devices recently grown by the ALE technique.
S. M. Bedair, S. M. Bedair,
"Recent progress in atomic layer epitaxy", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 1026702 (28 January 1993); doi: 10.1117/12.141398; https://doi.org/10.1117/12.141398