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28 January 1993 Semiconductors for the visible and ultraviolet
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Proceedings Volume 10267, Integrated Optics and Optoelectronics: A Critical Review; 102670F (1993) https://doi.org/10.1117/12.141402
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Between bandgap energies of 1.77 and 3.35 electron volts (eV) lies the visible spectrum while the ultraviolet (UV) spectrum lies between 3.35 and 12.39 eV. Over 99% of all semiconductor research and development expenditures during the past 50 years has been expended on semiconductor materials exhibiting bandgaps below these ranges. Many good reasons for the relative lack of attention to these higher bandgap semiconductors exist and are addressed herein, but various new growth techniques and incentives have resulted in research funding support in these materials recently experiencing greater increases than any other category of semiconductors.

In addition to the obvious applications of visible and UV light emission and detection, these materials offer other significant advantages including negative electron affinity, extremely high dielectric strength, low dielectric constants, very high charge carrier velocities (at high electric field strengths) and extremely low intrinsic leakage. The latter attribute enables such new concepts as non-volatile memories and extremely low loss charge coupled devices.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Max N. Yoder "Semiconductors for the visible and ultraviolet", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 102670F (28 January 1993); https://doi.org/10.1117/12.141402
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