28 January 1993 Integration technologies for III-V semiconductor optoelectronics based on quantum-well waveguides
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Proceedings Volume 10267, Integrated Optics and Optoelectronics: A Critical Review; 102670I (1993); doi: 10.1117/12.141405
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
III-V semiconductor devices, most notably light-emitting diodes, lasers and photodetectors lie at the heart of modem optoelectronics. The efficiency of the conversion process between electrons and photons, in either direction, can be remarkably high in the best laser and photodiode devices. For communications purposes, the high modulation rate capability of semiconductor lasers and the high bandwidth detection capability of photodiodes, both traceable in part to the intrinsically small size of typical devices, are important aspects. Because of the importance of the communications (in particular fibre-optical communications) applications of optoelectronic integrated circuits (OEICs), this review will concentrate on that area, but other potential areas of application will also receive some attention.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. De La Rue, John H. Marsh, "Integration technologies for III-V semiconductor optoelectronics based on quantum-well waveguides", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 102670I (28 January 1993); doi: 10.1117/12.141405; https://doi.org/10.1117/12.141405
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KEYWORDS
Optoelectronics

Group III-V semiconductors

Waveguides

Photodiodes

Photonic integrated circuits

Semiconductor lasers

Electrons

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