Translator Disclaimer
2 March 1989 A Device For Non-Volatile Storage Of Image Information
Author Affiliations +
Proceedings Volume 1027, Image Processing II; (1989)
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
An image sensor with storage capability is presented. It is sensitive in the visible wavelength region, where exposure times of 5 ms at intensities of 90 gW/cm2 and photon energies of about 2.23 eV give detectable signals of stored information. The device is designed as a matrix with optical read out and is fabricated in silicon technology.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Shivaraman and Olof Engstrom "A Device For Non-Volatile Storage Of Image Information", Proc. SPIE 1027, Image Processing II, (2 March 1989);


Frequency tunable photo-impedance sensor
Proceedings of SPIE (October 07 2014)
User-friendly design approach for analog layout design
Proceedings of SPIE (March 28 2017)
Front-side-bombarded metal-plated CMOS electron sensors
Proceedings of SPIE (April 01 1998)
Novel CMOS electron imaging sensor
Proceedings of SPIE (September 07 1998)

Back to Top