Radiation effect in quantum well optoelectronic devices

Bruce D. Evans; Harold E. Hager; Barrie W. Hughlock; Eric Y. Chan

doi:10.1117/12.181369

8 September 1993 Radiation effect in quantum well optoelectronic devices

Bruce D. Evans, Harold E. Hager, Barrie W. Hughlock, Eric Y. Chan

Proceedings Volume 10272, Fiber Optics Reliability and Testing: A Critical Review; 102720E (1993) https://doi.org/10.1117/12.181369
Event: Optical Tools for Manufacturing and Advanced Automation, 1993, Boston, MA, United States

Abstract

The survivability for satellite applications of two classes of quantum-well-based fiberoptic light sources was evaluated by MeV-proton space-environment simulation studies. The first was an InGaAs/GaAs strained-layer quantum-well (QW) laser; the second was a broad-band light-emitting diode (LED) based on dual asymmetric quantum wells in the InGaAs/GaAs/AlGaAs system. In contrast to earlier reports comparing bulk active-region heterostructure LEDs with similarly structured laser diodes, these QW LEDs were more tolerant of proton irradiation (-3dB power at ~3xl0¹³ protons/cm²) than the QW lasers (- 3dB power at ~3xl0¹² protons/cm²). The LEDs were operated far into gain saturation with a high-loss cavity structure, while the lasers were operated in a region where gain was more sensitive to current density. Therefore, atomic displacement-related recombination sites had a greater detrimental effect upon the lasers than the LEDs. The lasers held constant slope efficiency, and current thresholds increased linearly with proton fluence, while both LED power and slope efficiency decreased with proton fluence. The degradation was similar to that predicted from a universal damage relation for GaAs electronic devices, and extends that relation to include these QW photonic devices.

Citation Download Citation

Bruce D. Evans, Harold E. Hager, Barrie W. Hughlock, and Eric Y. Chan "Radiation effect in quantum well optoelectronic devices", Proc. SPIE 10272, Fiber Optics Reliability and Testing: A Critical Review, 102720E (8 September 1993); https://doi.org/10.1117/12.181369

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