9 February 1989 Infrared Laser Scan Microscope
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Proceedings Volume 1028, Scanning Imaging; (1989) https://doi.org/10.1117/12.950349
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The infrared laser scan microscope is especially suitable for applications in material science and in the semiconductor industry. The infrared laser beam is deflected in x and y directions by a mirror system and the scanning beam is focussed with the help of a light microscope onto the sample. Four different IR (infrared) lasers can be used; the semiconductor lasers AlGaAs/GaAs with a wavelength of about 820nm and GaInAsP/InP with a wavelength of about 1.3μm and the helium-neon-lasers emitting at 1.152μm and 1.523pμm. The lasers are situated outside the optics and are connected by a special monomode glass fiber. The He-Ne laser, with a wavelength of 1.152μm, is of special significance in the investigation of silicon and ICs because its wavelength exactly corresponds to the energy gap of silicon at room temperature ( 1.07eV ). It is therefore possible to image silicon at different depths, to test devices from the back and, moreover, to produce an OBIC ( Optical Beam Induced Current ) signal from the back of the device.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eberhard Ziegler, Eberhard Ziegler, Hans Peter Feuerbaum, Hans Peter Feuerbaum, } "Infrared Laser Scan Microscope", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); doi: 10.1117/12.950349; https://doi.org/10.1117/12.950349
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