Photoluminescence And Optical Beam Induced Current Imaging Of Defects

P. D. Pester; T. Wilson

doi:10.1117/12.950342

9 February 1989 Photoluminescence And Optical Beam Induced Current Imaging Of Defects

P. D. Pester, T. Wilson

Proceedings Volume 1028, Scanning Imaging; (1989) https://doi.org/10.1117/12.950342
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The minority carrier distribution in a semi-infinite semiconductor due to light focussed onto the surface via a high numerical aperture lens is given. The contrast obtained in both Photoluminescence and Optical Beam Induced Current defect imaging is derived as a function of the illuminating lens numerical aperture. It is shown that the maximum resolution attainable in both techniques is comparable.

Citation Download Citation

P. D. Pester and T. Wilson "Photoluminescence And Optical Beam Induced Current Imaging Of Defects", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950342

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