30 July 1997 SIMS characterization of optical materials
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Abstract
A Critical Review is given on the use of the SIMS technique. The basic concepts of sputtering process and secondary ion production as well as quantification problems are briefly reviewed. A description of the possible operational modes and instrumental aspects are presented. Particular attention is devoted to the specific analysis of insulating samples. SIMS has been applied to the characterization of LiNbCO3 passive and active optical waveguides obtained by thermal diffusion of metals from thin film and by proton ion-exchange. Results obtained by SIMS on the study of the chemical interaction in ion-implanted silica glass are presented. The technique has also been used to measure in-depth concentration profiles of metals in soda-lime glass planar waveguides obtained by metal ion-exchange process and to correlate compositional modifications with the optical properties. The need of complementary techniques for quantification of the obtained data has been underlined.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frederico Caccavale, Frederico Caccavale, } "SIMS characterization of optical materials", Proc. SPIE 10291, Materials Characterization and Optical Probe Techniques: A Critical Review, 102910N (30 July 1997); doi: 10.1117/12.279850; https://doi.org/10.1117/12.279850
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