27 January 1998 Native oxide technology for III-V optoelectronic devices
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Abstract
This paper reviews the status of the III-V native oxide formed by steam oxidation of Al(Ga)As and its use in device fabrication. The paper presents progress on understanding the processing chemistry, material properties, and edge-emitting laser diodes, vertical-cavity surface-emitting lasers, optical waveguides, field effect transistors, and other novel device structures. Particular emphasis is placed on its use in vertical-cavity surface-emitting lasers, since to date the impact of the native oxide has been greatest for these devices.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dennis G. Deppe, Diana L. Huffaker, "Native oxide technology for III-V optoelectronic devices", Proc. SPIE 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review, 1029209 (27 January 1998); doi: 10.1117/12.300617; https://doi.org/10.1117/12.300617
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