Native oxide technology for III-V optoelectronic devices

Dennis G. Deppe; Diana L. Huffaker

doi:10.1117/12.300617

27 January 1998 Native oxide technology for III-V optoelectronic devices

Dennis G. Deppe, Diana L. Huffaker

Proceedings Volume 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review; 1029209 (1998) https://doi.org/10.1117/12.300617
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

This paper reviews the status of the III-V native oxide formed by steam oxidation of Al(Ga)As and its use in device fabrication. The paper presents progress on understanding the processing chemistry, material properties, and edge-emitting laser diodes, vertical-cavity surface-emitting lasers, optical waveguides, field effect transistors, and other novel device structures. Particular emphasis is placed on its use in vertical-cavity surface-emitting lasers, since to date the impact of the native oxide has been greatest for these devices.

Citation Download Citation

Dennis G. Deppe and Diana L. Huffaker "Native oxide technology for III-V optoelectronic devices", Proc. SPIE 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review, 1029209 (27 January 1998); https://doi.org/10.1117/12.300617

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