Analysis of low dielectric constant and Cu-based single- and multilayered films using spectroscopic ellipsometry

Arun R. Srivatsa; Carlos L. Ygartua

doi:10.1117/12.351665

19 July 1999 Analysis of low dielectric constant and Cu-based single- and multilayered films using spectroscopic ellipsometry

Arun R. Srivatsa, Carlos L. Ygartua

Author Affiliations +

Proceedings Volume 10294, Optical Metrology: A Critical Review; 102940H (1999) https://doi.org/10.1117/12.351665
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Many materials are being considered as candidates for Low Dielectric Constant, InterLayer Dielectric (ILD) applications. It is expected that some users will introduce Low K ILD materials in Aluminum based processing. Simultaneously, considerable process development is underway worldwide for Copper based Dual Damascene structures and integration of Low K ILD materials in such structures. Spectroscopic Ellipsometry (SE) is widely used in the Integrated Circuit (IC) industry for routine production monitoring. The dispersion information (variation of refractive index with wavelength) from SE can also be correlated to the microstructure and chemical composition of thin films. This provides a powerful, non-destructive and rapid method of analysis and process characterization. In this review, we discuss the application of this technique to the characterization of single and multilayered thin films based on Low Dielectric constant materials. Results of SE analysis of copper films copper oxides and dielectric multilayered films on copper are also presented.

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Arun R. Srivatsa and Carlos L. Ygartua "Analysis of low dielectric constant and Cu-based single- and multilayered films using spectroscopic ellipsometry", Proc. SPIE 10294, Optical Metrology: A Critical Review, 102940H (19 July 1999); https://doi.org/10.1117/12.351665

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