28 September 1999 DC to 50-GHz wide-bandwidth InGaAs photodiodes and photoreceivers
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Abstract
Discovery Semiconductors has developed 50 GHz “Dual-depletion InGaAs/InP Photodiodes”. The PIN operates at -3V reverse bias and has minimum responsivity of 0.7 AAV at 1.3 and 1.55 um wavelength. The Ripple Factor is less than ±1 dB for a wide band of frequencies, DC to 50 GHz. The salient feature of the PIN is an on-chip coplanar waveguide output for proper impedance matching. The PIN exhibits group delay of less than ± 20 psec across the entire bandwidth. Discovery Semiconductors has also designed 50 GHz InGaAs PIN / p-HEMT Amplifier Photoreceiver Opto-electronic Integrated Circuit (OEIC) with a voltage conversion gain of 60 VAV at 1550 nm. The Photoreceiver OEIC exhibits an electric back reflection (S22) of less than -10 dB across the entire 50 GHz bandwidth. The optical back reflection is better than -30 dB at 1300 and 1550 nm.
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Abhay M. Joshi, Abhay M. Joshi, Xinde Wang, Xinde Wang, } "DC to 50-GHz wide-bandwidth InGaAs photodiodes and photoreceivers", Proc. SPIE 10295, Reliability of Optical Fibers and Optical Fiber Systems: A Critical Review, 102950C (28 September 1999); doi: 10.1117/12.361073; https://doi.org/10.1117/12.361073
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