PROCEEDINGS VOLUME 10303
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES | 19-25 JANUARY 2002
Gallium-Nitride-based Technologies: A Critical Review
IN THIS VOLUME

1 Sessions, 12 Papers, 0 Presentations
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES
19-25 January 2002
San Jose, California, United States
Gallium Nitride Based Technologies
Proc. SPIE 10303, Front Matter: Volume 10303, 1030301 (28 August 2002); doi: 10.1117/12.2285212
Proc. SPIE 10303, Growth of wide-bandgap nitride semiconductors by MBE, 1030302 (28 August 2002); doi: 10.1117/12.482615
Proc. SPIE 10303, MOCVD growth of wide-bandgap nitride semiconductors, 1030303 (28 August 2002); doi: 10.1117/12.482620
Proc. SPIE 10303, Degradation mechanisms in group-III nitride devices, 1030305 (28 August 2002); doi: 10.1117/12.482621
Proc. SPIE 10303, Optoelectronic devices built on bulk GaN substrates, 1030306 (28 August 2002); doi: 10.1117/12.482622
Proc. SPIE 10303, Epitaxial lateral overgrowth and other approaches for low-defect-density GaN/sapphire, 1030307 (28 August 2002); doi: 10.1117/12.482623
Proc. SPIE 10303, Advanced processing of group-III nitrides, 1030308 (28 August 2002); doi: 10.1117/12.482624
Proc. SPIE 10303, Optical gain in wide-bandgap group-III nitrides, 103030A (28 August 2002); doi: 10.1117/12.482625
Proc. SPIE 10303, Wide-bandgap group-III nitride lasers, 103030B (28 August 2002); doi: 10.1117/12.482616
Proc. SPIE 10303, Electronic structure of nitrogen-doped GaAs and GaP, 103030D (28 August 2002); doi: 10.1117/12.482617
Proc. SPIE 10303, Long- and short-wavelength VCSELs, 103030F (28 August 2002); doi: 10.1117/12.482618
Proc. SPIE 10303, Back-illuminated solar-blind AlxGa1-xN p-i-n photodiodes, 103030G (28 August 2002); doi: 10.1117/12.482619
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