28 August 2002 Front Matter: Volume 10303
Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 1030301 (2002) https://doi.org/10.1117/12.2285212
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 10303, including the Title Page, Copyright information, Table of Contents, and Conference Committee listing.

Conference Committee

Conference Chair

  • Marek Osiński, CHTM/University of New Mexico (USA)

Session Chairs

  • Epitaxial Growth Techniques for Wide-Bandgap Nitrides

    James S. Speck, University of California/Santa Barbara (USA)

  • Extended Defects and Degradation Mechanisms

    Theodore D. Moustakas, Boston University (USA)

  • Substrates for Growth of Low-Defect-Density Wide-Badgap Group-III Nitrides

    Shiro Sakai, University of Tokushima (Japan)

  • Advanced Processing and LEDs

    Takashi Mukai, Nichia Corporation (Japan)

  • Wide-Bandgap Lasers

    Piotr Perlin, High Pressure Research Center UNIPRESS (Poland)

  • Dilute Nitrides

    John F. Klem, Sandia National Laboratories (USA)

  • Nitride VCSELs and Photodetectors

    Pierre Gibart, Centre de Recherches sur l’Hétéroépitaxie et ses Applications/CNRS (France)

© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
} "Front Matter: Volume 10303", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030301 (28 August 2002); doi: 10.1117/12.2285212; https://doi.org/10.1117/12.2285212
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