28 August 2002 Degradation mechanisms in group-III nitride devices
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Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 1030305 (2002) https://doi.org/10.1117/12.482621
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Devices fabricated in the group-III nitride material system have shown significant resistance to the types of degradation common to those encountered in the GaAs and InP -based systems. As a result, GaN-based light emitting diodes have pushed the technological limits of package technology and design for high output power. The relatively high defect densities in these materials have been shown to be a device weakness for laser applications. This paper reviews these concepts to try to give the readers an understanding of the differences between the group-III nitrides and standard III-V materials.
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Daniel L. Barton, Daniel L. Barton, Marek Osinski, Marek Osinski, } "Degradation mechanisms in group-III nitride devices", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030305 (28 August 2002); doi: 10.1117/12.482621; https://doi.org/10.1117/12.482621
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