28 August 2002 Optical gain in wide-bandgap group-III nitrides
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Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 103030A (2002) https://doi.org/10.1117/12.482625
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Understanding the mechanisms of optical gain in a semiconductor laser material is the key issue towards minimizing the threshold current density. For nitride-based laser structures, there has been a lively debate as to the role of fluctuations, polarization fields, and many-body effects in todays GalnN/GaN/AlGaN laser structures.

A thorough understanding of the fundamental materials properties forms the basis of any further consideration. We will then review the basic models, the theoretical approaches, and the available experimental evidence supporting the competing views of optical gain in the nitrides. The properties of guided optical modes in nitride waveguides will play an important role. A critical discussion of those results will finally allow us to discuss ultimate performance limits for laser diodes.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Hangleiter, Andreas Hangleiter, } "Optical gain in wide-bandgap group-III nitrides", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030A (28 August 2002); doi: 10.1117/12.482625; https://doi.org/10.1117/12.482625

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