28 August 2002 Wide-bandgap group-III nitride lasers
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Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 103030B (2002) https://doi.org/10.1117/12.482616
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Wide-bandgap group-ill nitride lasers, which emit from near-ultraviolet to pure-blue, are reviewed. Characteristics of 405 nm wavelength laser diodes (LDs) are discussed. Reducing threading dislocation can increase the lifetime of nitride LDs. Using epitaxial lateral overgrowth technique, the dislocation density of the order of 105 cm-2 has been obtained. The relation between the lifetime of nitride LDs and the density of dislocation are discussed. Some optical and electrical properties are very important for optical disk system such as digital versatile disk (DVD) system. In use of the DVD system, important properties of nitride LDs are discussed. Furthermore, near-ultraviolet LDs and pure-blue LDs are described. The near-ultraviolet LDs uses GaN or AlInGaN active layer instead of In GaN.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Mukai, Takashi Mukai, Shinichi Nagahama, Shinichi Nagahama, Tomoya Yanamoto, Tomoya Yanamoto, Masahiko Sano, Masahiko Sano, "Wide-bandgap group-III nitride lasers", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030B (28 August 2002); doi: 10.1117/12.482616; https://doi.org/10.1117/12.482616


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