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28 August 2002 Long- and short-wavelength VCSELs
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Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 103030F (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Nitride-based VCSELs are very attractive for extending the wavelength range of the parallel optoelectronic systems. The short-wavelength GaN-VCSELs are expected as lights, displays and parallel read/write heads of optical memories. On the other hand, the dilute-nitride GalnNAs on a GaAs will become a key for long-wavelength VCSELs utilized in high-speed and low cost network systems covering from very short to long-distance. Critical issues for realizing VCSELs are the formation of the high quality cavity as well as the growth of the high quality active layer. For the GaN-based system, the crystal quality of the active layer has been improved. Fabrication technologies of high reflectivity mirrors and a short cavity are necessary for the vertical cavity structure. For GalnNAs-based VCSELs, matured GaAs-based VCSEL technologies such as DBRs and selective oxidation are applicable. In these few years, the GalnNAs crystal quality have been improved and the VCSEL performances become practical level. In this paper, fabrication technologies of the vertical cavity for GaN-based VCSELs are presented and the current state of GalnNAs VCSELs is reviewed.
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Tomoyuki Miyamoto, Kenichi Iga, and Fumio Koyama "Long- and short-wavelength VCSELs", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030F (28 August 2002);


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