20 June 1989 The Operation Of A Semiconductor Preionised DF Laser
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Proceedings Volume 1031, 7th Intl Symp on Gas Flow and Chemical Lasers; (1989); doi: 10.1117/12.950530
Event: 7th International Symposium on Gas Flow and Chemical Lasers, 1988, Vienna, Austria
A semiconductor preionised pulsed chemical DF laser is operated using SF6 and D2 as fuels. The technique results in uniform, stable and high energy density discharges and provides output energies and peak powers of 40 mJ and 1.2 MW from 20 cc active volume. Discharge measurements are correlated with the output characteristics of the laser to show that the important excitation parameter is the total charge passed by the discharge. A fluorine production rate coefficient is estimated to be 3.67 x 10-9 cm /s and this is shown to be consistent with a dominant role for fluorine production by ionisation of SF6 in the discharge.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Gorton, P. H. Cross, E. W. Parcell, "The Operation Of A Semiconductor Preionised DF Laser", Proc. SPIE 1031, 7th Intl Symp on Gas Flow and Chemical Lasers, (20 June 1989); doi: 10.1117/12.950530; https://doi.org/10.1117/12.950530


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