29 August 2017 Ultrafast optical properties of doped InAs/GaAs self-assembled quantum dots
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031316 (2017) https://doi.org/10.1117/12.2283838
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
We have studied the dynamics of photocarriers in doped InAs/GaAs self-assembled quantum dots using time- resolved photoluminescence measurements. The influence of the excitation conditions (excitation power, wavelength) and the effect of the doping level have been investigated. The rise time of the quantum dot emission signal is correlated with the number of carriers inside the dots whether they are introduced by doping or by photoexcitation. In both cases, the photoluminescence rise time diminishes with the number of carriers. A four-level model taking into account different interlevel relaxation and capture mechanisms has been used for the simulations of the photoluminescence transients. Discussion on the physical hypothesis behind this model is given.
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Daria Riabinina, "Ultrafast optical properties of doped InAs/GaAs self-assembled quantum dots", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031316 (29 August 2017); doi: 10.1117/12.2283838; https://doi.org/10.1117/12.2283838
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