29 August 2017 Erbium-doped SiOxNy films produced by ECR-PECVD
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103131E (2017) https://doi.org/10.1117/12.2283846
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
In this paper, we report on the fabrication of Erbium doped waveguide amplifiers (EDWA's) using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The salient process parameters are presented, as are the determination of the Er content through Rutherford Backscattering (RBS), and measurements of the film composition using elastic recoil detection (ERD), nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS).
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Edward A. Irving, "Erbium-doped SiOxNy films produced by ECR-PECVD", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103131E (29 August 2017); doi: 10.1117/12.2283846; https://doi.org/10.1117/12.2283846
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