29 August 2017 Novel three dimensional masking techniques for integrated photonic devices fabrication using low energy ion implantation induced quantum well intermixing
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103131Z (2017) https://doi.org/10.1117/12.2283867
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
Low energy ion implantation induced quantum well intermixing is an attractive way to obtain bandgap tuning across laser heterostructures. This technique is well suited for InP based heterostructures where the amount of blueshift obtained is closely linked to the amount of point defects created through ion implantation. We have developed novel masking techniques for the fabrication of multiple bandgap heterostructures using a single ion implantation step through variable thickness masks. Two main approaches have been studied for ion implantation masking in order to address both high precision and large flexibility of the mask thickness.
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Vincent Aimez, "Novel three dimensional masking techniques for integrated photonic devices fabrication using low energy ion implantation induced quantum well intermixing", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103131Z (29 August 2017); doi: 10.1117/12.2283867; https://doi.org/10.1117/12.2283867
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