29 August 2017 Laser tunning silicon microdevices for analog microelectronics
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031324 (2017) https://doi.org/10.1117/12.2283872
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
A novel laser tunning technique, fully compatible with conventional CMOS processes, is described for analog and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in the range of 100S2 to a few MS2, with an accuracy of 5Oppm, by using an iterative process.
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M. Meunier, M. Meunier, } "Laser tunning silicon microdevices for analog microelectronics", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031324 (29 August 2017); doi: 10.1117/12.2283872; https://doi.org/10.1117/12.2283872
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