29 August 2017 ECR-PECVD silicon oxynitride thin films for flat panel displays
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103133N (2017) https://doi.org/10.1117/12.2283927
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
Electrical and Material properties of dielectric thin films of silicon oxynitride, deposited at low substrate temperatures using an ultrahigh vacuum electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) system have been examined using X-Ray Photon Spectroscopy (XPS), Nuclear Reaction Analysis (NRA), Elastic Recoil Detection (ERD) and chemical etching. Electrical properties, capacitance and dielectric breakdown field strengths of these films are found to be comparable to films deposited in systems utilizing ion assist physical vapour deposition (PVD) and sputtering. Thin film electroluminescent devices incorporating ECR SiON dielectrics demonstrate high brightness and superior breakdown characteristics.
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Richard Wood, Richard Wood, } "ECR-PECVD silicon oxynitride thin films for flat panel displays", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103133N (29 August 2017); doi: 10.1117/12.2283927; https://doi.org/10.1117/12.2283927
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