29 August 2017 Reduction of dark current in a-Si:H p-i-n photodetectors
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103133S (2017) https://doi.org/10.1117/12.2283932
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
This article reports techniques used for reduction of the dark current density of amorphous silicon (a-Si:H) p-i-n photodetectors under reverse bias to the 10-12 A/cm2 range. This range of dark currents is critical in applications involving low-level light detection. The dark current of these devices is significantly affected by the quality of the p-i interface and the band-gap of the p-type material. The latter can be addressed by employing of a p-type large band-gap (2.23eV) material such as amorphous silicon carbide (a-SiC:H) layer so as to increase the built-in potential at the junction. This should decrease the dark current, however, the transition from a-Si:H to the large band gap p-type a-SiC:H layer leads to a band-gap discontinuity, which can degrade the integrity of the interface. Thus, a graded layer is introduced at the p-i interface to provide a smooth transition of energies over a few monolayers. In addition, a thin insulating silicon carbide p-layer is introduced prior to deposition of the heavily doped p-region to further reduce the dark current.
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Peyman Servati, Peyman Servati, } "Reduction of dark current in a-Si:H p-i-n photodetectors", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103133S (29 August 2017); doi: 10.1117/12.2283932; https://doi.org/10.1117/12.2283932
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