29 August 2017 High-resolution X-ray imaging using a high aspect ratio SU-8 microstructure
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103133X (2017) https://doi.org/10.1117/12.2283937
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
One common approach with digital X-ray imaging using amorphous silicon is to integrate a uniform phosphor layer for conversion of X-ray to visible photons onto an array of image sensor pixels. Each pixel in the array consists of an a-Si:H photodiode (PD) and an a-Si:H thin film transistor (TFT) [1] (Fig. 1). The X-ray conversion efficiency of phosphor layer, which increases with thickness, is limited because of crosstalk among adjacent pixels. This paper presents a design incorporating a new SU-8 microstructure that alleviates the crosstalk issue.
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Ye Zhou, "High-resolution X-ray imaging using a high aspect ratio SU-8 microstructure", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103133X (29 August 2017); doi: 10.1117/12.2283937; https://doi.org/10.1117/12.2283937
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