29 August 2017 Improved analysis of CMOS photodiode
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031341 (2017) https://doi.org/10.1117/12.2283941
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
Presently, various aspects of CMOS technology scaling present additional challenges in CMOS image sensor design. Designers require optical as well as electrical models of the CMOS based pixels and the pixel arrays in order to translate given design objectives to proper choices of technology, pixel architecture, array structure, design layout, etc. Toward this end, we present a one-dimensional analysis and a working model of CMOS photodiode emphasizing on the effect of the finite epitaxial thickness and the presence of electric field at the interface between the epitaxial layer and the substrate bulk.
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Ji Soo Lee, "Improved analysis of CMOS photodiode", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031341 (29 August 2017); doi: 10.1117/12.2283941; https://doi.org/10.1117/12.2283941
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