29 August 2017 Precise characterization of optical thin films and compound semiconductor stacks using spectroscopic ellipsometry
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Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031350 (2017) https://doi.org/10.1117/12.2283976
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Abstract
Spectroscopic ellipsometry is a technique that is powerful for characterizing thin films and materials. The technique is now routinely used in R&D laboratories for characterizing a very wide diversity of thin films and materials, and within manufacturing facilities for monitoring deposition processes. Spectroscopic ellipsometry relies on the determination of the polarization state of an incident beam upon reflection on the sample under characterization. When performing spectroscopic ellipsometry, the polarization state is determined at many discrete wavelengths over a broad spectral range. The change in the polarization state can be traced to the physical properties of the thin film by means of a model and through regression analysis. Physical characteristics such as layer thickness, surface roughness, index of refraction and coefficient of absorption of the materials can be determined with excellent precision. The principle of the technique is outlined in Fig. 1.
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Jean-Claude Fouere, Jean-Claude Fouere, } "Precise characterization of optical thin films and compound semiconductor stacks using spectroscopic ellipsometry", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031350 (29 August 2017); doi: 10.1117/12.2283976; https://doi.org/10.1117/12.2283976
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