19 May 2003 Study of silica subsurface defects by using cathodoluminescence and trapping of charge measurements
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Abstract
Polishing of optical components produces defects in the subsurface resulting in a decrease in their performance. These defects can be large, like cracks, but also punctual, like oxygen vacancies or non bridging bonds. Under electronic excitation, punctual defects can produce luminescence (also called cathodoluminescence) and/or can trap electrical charges. We have developed a new technique for investigating the trapping of charge and the cathodoluminescence in insulators by using a Scanning Electron Microscope (SEM). Then, it is possible to control the depth of electron penetration by changing the electron beam energy. Therefore, we hope that this technique allows measuring the depth profile of subsurface punctual defects due to the polishing. In this work, we have investigated amorphous silica prepared with different surface finishing.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Bigarre, "Study of silica subsurface defects by using cathodoluminescence and trapping of charge measurements", Proc. SPIE 10314, Optifab 2003: Technical Digest, 103140R (19 May 2003); doi: 10.1117/12.2284016; https://doi.org/10.1117/12.2284016
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