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18 May 1989 Energy Transfer Processes In YAG:Er And YAG:Nd
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Proceedings Volume 1033, Trends in Quantum Electronics; (1989)
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania
The energy transfer processes in YAG:Er and YAG:Nd are discussed in connection with their effect on the kinetics of population of the levels involved in the laser emission. In YAG:Er the energy transfer processes de-excite the terminal laser level 4I3/2 and repump the initial laser level T 4-11p thus assuring a high efficiency of the three-micron emission at the Room Temperature in high concentrated crystals. A study of the departures from the exponential decay of luminescence of the pump level in in YAG:Er and of the metastable level 4F3/2 in YAG:Nd at activator concentrations up to 1.5 % show that these levels can transfer the excitation by cross-relaxation with identical activator ions and this transfer is of direct (static) donor-acceptor type. For YAG:Nd these processes limit severely the useful activator concentration.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Ursu, V. Lupei, A. M . Prokhorov, and V. I. Zhekov "Energy Transfer Processes In YAG:Er And YAG:Nd", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989);

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