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18 May 1989 Laser-Induced Chemical Etching Of Silicon In Chlorine Atmosphere
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Proceedings Volume 1033, Trends in Quantum Electronics; (1989)
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania
Laser-induced chemical etching of (100) Si in C12 atmosphere has been investigatEd using a combined laser-beam irradiation scheme. 308 nm XeC1 excimer laser radiation at parallel incidence has been used to exclusively generate Cl atoms in the gas phase abovE the Si surface. Additionally, 647.1 nm Kr+ laser radiation at perpendicular incidence has been used to exclusively generate photocarriers within the Si surface. The Cl atom concertration was determined - independently - from both the observed chemiluminescence following the Cl-Cl atom recombination, and from numerical calculations. The etch rate W observed or the Si surface was found to be directly proportional to the Cl atom concentration in,tpe gas phase, and it increases sublinearly with the Kr+ laser power P according to W ≈ P0.7. The microscopic mechanisms of photo-enhanced etching are discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Kullmer and D. Buerle "Laser-Induced Chemical Etching Of Silicon In Chlorine Atmosphere", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989);

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