Resonant Raman Study Of ZnSe Epitaxial Layers Grown On GaAs Substrates

M . I. Djibladze; I. I. Dorosh; A. A. Zlenko; G. N. Kekelidze; P. P. Pashinin; K. A. Prokhorov

doi:10.1117/12.950622

18 May 1989 Resonant Raman Study Of ZnSe Epitaxial Layers Grown On GaAs Substrates

M . I. Djibladze, I. I. Dorosh, A. A. Zlenko, G. N. Kekelidze, P. P. Pashinin, K. A. Prokhorov

Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950622
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania

Abstract

Quantitative difference between Raman and resonant Raman scattering spectra of thin ZnSe layers on GaAs substrates is presented. The dynamics of changing of Raman scattering properties while shortenning the exciting light wavelength for ZnSe/GaAs heterojunction is given. The difference in polarization spectra is demonstrated.

Citation Download Citation

M . I. Djibladze, I. I. Dorosh, A. A. Zlenko, G. N. Kekelidze, P. P. Pashinin, and K. A. Prokhorov "Resonant Raman Study Of ZnSe Epitaxial Layers Grown On GaAs Substrates", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950622

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