Solid-Phase Laser Doping Of Silicon

A. M. Prokhorov; S. G. Kiyak; A. A. Manenkov; C. N. Mikhailova; A. S. Seferov; V. Craciun

doi:10.1117/12.950631

18 May 1989 Solid-Phase Laser Doping Of Silicon

A. M. Prokhorov, S. G. Kiyak, A. A. Manenkov, C. N. Mikhailova, A. S. Seferov, V. Craciun

Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950631
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania

Abstract

The up-to-date technology of semiconductor devices employs a number of doping procedures for semiconductor materials including epitaxy from the gaseous and liquid phases, diffusion, variation of the crystal growth conditions by a particular program1. These pro-cedures are time-consuming and complicated, since they involve a series of accurate and laborious processes. Besides, the doped layers thus obtained feature a large thickness ,and p-n junctions - a large depth.

Citation Download Citation

A. M. Prokhorov, S. G. Kiyak, A. A. Manenkov, C. N. Mikhailova, A. S. Seferov, and V. Craciun "Solid-Phase Laser Doping Of Silicon", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950631

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