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18 May 1989 Solid-Phase Laser Doping Of Silicon
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Proceedings Volume 1033, Trends in Quantum Electronics; (1989)
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania
The up-to-date technology of semiconductor devices employs a number of doping procedures for semiconductor materials including epitaxy from the gaseous and liquid phases, diffusion, variation of the crystal growth conditions by a particular program1. These pro-cedures are time-consuming and complicated, since they involve a series of accurate and laborious processes. Besides, the doped layers thus obtained feature a large thickness ,and p-n junctions - a large depth.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. M. Prokhorov, S. G. Kiyak, A. A. Manenkov, C. N. Mikhailova, A. S. Seferov, and V. Craciun "Solid-Phase Laser Doping Of Silicon", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989);

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