24 August 2017 Quantum well intermixed tunable wavelength single stripe laser diode
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Abstract
A single waveguide laser with two separately addressed sections is fabricated using selective area intermixing of InGaAsP multiple quantum well grown on InP substrate. The selective intermixing of quantum wells is achieved by capping the two sections with PECVD grown silicon nitride and silicon dioxide respectively followed by rapid thermal annealing the device at 750°C for 30s prior to the fabrication of the quantum well laser. The fabricated device is capable of producing laser emission that can be tuned continuously from 1523 nm to 1556 nm by applying separate electrical currents into each 400 μm long section.
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Thamer Tabbakh, Thamer Tabbakh, Patrick LiKamWa, Patrick LiKamWa, } "Quantum well intermixed tunable wavelength single stripe laser diode", Proc. SPIE 10345, Active Photonic Platforms IX, 1034504 (24 August 2017); doi: 10.1117/12.2274226; https://doi.org/10.1117/12.2274226
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