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24 August 2017 Optical modulation in silicon-vanadium dioxide photonic structures
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Abstract
All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.
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© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin J. Miller, Kent A. Hallman, Richard F. Haglund, and Sharon M. Weiss "Optical modulation in silicon-vanadium dioxide photonic structures", Proc. SPIE 10345, Active Photonic Platforms IX, 103451D (24 August 2017); https://doi.org/10.1117/12.2274655
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