Ultrafast carrier dynamics in atomically thin two-dimensional crystals

Felice Gesuele

doi:10.1117/12.2277512

3 April 2018 Ultrafast carrier dynamics in atomically thin two-dimensional crystals

Felice Gesuele

Proceedings Volume 10348, Physical Chemistry of Semiconductor Materials and Interfaces XVI; 103481N (2018) https://doi.org/10.1117/12.2277512
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

We report an investigation of the charge carrier dynamics in single layer CVD-grown graphene, by means of ultrafast transient absorption spectroscopy. Our results show a pump-induced negative differential absorption, in a wide spectral range. Decay dynamics are characterized by a biexponential behavior with two characteristic lifetimes on the order of hundreds of femtoseconds and few picoseconds respectively, which can be interpreted as due to phonon assisted recombination mechanisms. The fact that the behavior does not change substantially with the pump energy indicates that Auger processes play a role at the early stages of carrier dynamics. These results provide insights into the photo-physics of two-dimensional graphene, at monolayer level, and pave the way to its applications in optoelectronics and photovoltaics.

Citation Download Citation

Felice Gesuele "Ultrafast carrier dynamics in atomically thin two-dimensional crystals", Proc. SPIE 10348, Physical Chemistry of Semiconductor Materials and Interfaces XVI, 103481N (3 April 2018); https://doi.org/10.1117/12.2277512

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