23 October 2017 Front Matter: Volume 10349
This PDF file contains the front matter associated with SPIE Proceedings Volume 10349, including the Title Page, Copyright information, Table of Contents, and Conference Committee listing.

The papers in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. Additional papers and presentation recordings may be available online in the SPIE Digital Library at SPIEDigitalLibrary.org.

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Please use the following format to cite material from these proceedings:

Author(s), “Title of Paper,” in Low-Dimensional Materials and Devices 2017, edited by Nobuhiko P. Kobayashi, A. Alec Talin, M. Saif Islam, Albert V. Davydov, Proceedings of SPIE Vol. 10349 (SPIE, Bellingham, WA, 2017) Seven-digit Article CID Number.

ISSN: 0277-786X

ISSN: 1996-756X (electronic)

ISBN: 9781510611559

ISBN: 9781510611566 (electronic)

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Paper Numbering: Proceedings of SPIE follow an e-First publication model. A unique citation identifier (CID) number is assigned to each article at the time of publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online and print versions of the publication. SPIE uses a seven-digit CID article numbering system structured as follows:

  • The first five digits correspond to the SPIE volume number.

  • The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript.


Numbers in the index correspond to the last two digits of the seven-digit citation identifier (CID) article numbering system used in Proceedings of SPIE. The first five digits reflect the volume number. Base 36 numbering is employed for the last two digits and indicates the order of articles within the volume. Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B…0Z, followed by 10-1Z, 20-2Z, etc.

Anjana, R., 1B

Baumgartner, Y., 0L

Biyikli, Necmi, 0M

Byles, Bryan W., 0G

Cansizoglu, Hilal, 0T, 0U, 1C, 1D

Cansizoglu, Mehmet F., 0U, 1C

Cao, Xueying, 12

Chen, Kuan-Lin, 16

Chen, Maggie Yihong, 05

Chen, Weimin, 12

Chung, Shu-Ru, 0P, 16

Clites, Mallory, 0H

Convertino, C., 0L

Czornomaz, L., 0L

Deminskyi, Petro, 0M

Elrefaie, Aly F., 0T, 0U, 1C, 1D

Enuka, Evarestus, 05

Gao, Yang, 0T, 0U, 1C, 1D

Ghandiparsi, Soroush, 0T, 0U, 1C, 1D

Haider, Ali, 0M

Hamzah, Azrul Azlan, 19

Islam, M. Saif, 0T, 0U, 1C, 1D

Jasna, M., 1B

Jayaraj, M. K., 1B

Kaya, Ahmet, 0U, 1D

Lei, Xiaohua, 12

Li, Xiangdi, 12

Liu, Xianming, 12

Majlis, Burhanuddin Yeop, 19

Mauthe, S., 0L

Mayer, B., 0L

Mayet, Ahmed, 0U, 1D

Mohamed, Mohd Ambri, 19

Monne, Mahmuda Akter, 05

Moselund, K. E., 0L

Perez, Cesar Bartolo, 0T, 0U, 1C, 1D

Pomerantseva, Ekaterina, 0G, 0H

Ponizovskaya Devine, Ekaterina, 0T, 0U, 1C, 1D

Riel, H., 0L

Schmid, H., 0L

Siao, Cyuan-Bin, 0P

Sousa, M., 0L

Wang, Kuan-Wen, 0P

Wang, Shih-Yuan, 0T, 0U, 1C, 1D

Wang, Zhuo, 05

Wirths, S., 0L

Yamada, Toshishige, 0U, 1C, 1D

Yeh, Wenchang, 0R

Yilmaz, Mehmet, 0M

Zainal Abidin, Hafzaliza Erny, 19

Zhang, Peng, 12

Conference Committee

Symposium Chairs

  • Harry A. Atwater Jr., California Institute of Technology (United States)

  • Nikolay I. Zheludev, Optoelectronics Research Centre (United Kingdom) and Nanyang Technological University (Singapore)

Symposium Co-chairs

  • James G. Grote, Air Force Research Laboratory (United States)

  • David L. Andrews, University of East Anglia (United Kingdom)

Conference Chairs

  • Nobuhiko P. Kobayashi, University of California, Santa Cruz (United States)

  • A. Alec Talin, Sandia National Laboratories (United States)

  • M. Saif Islam, University of California, Davis (United States)

  • Albert V. Davydov, National Institute of Standards and Technology (United States)

Conference Program Committee

  • Can Bayram, University of Illinois at Urbana-Champaign (United States)

  • Kristine A. Bertness, National Institute of Standards and Technology (United States)

  • Shadi A. Dayeh, Los Alamos National Laboratory (United States)

  • Supratik Guha, IBM Thomas J. Watson Research Center (United States)

  • Jung Han, Yale University (United States)

  • Chennupati Jagadish, The Australian National University (Australia)

  • Mutsumi Kimura, Ryukoku University (Japan)

  • Takhee Lee, Gwangju Institute of Science and Technology (Korea, Republic of)

  • Marina S. Leite, University of Maryland, College Park (United States)

  • Francois Leonard, Sandia National Laboratories (United States)

  • Samuel S. Mao, Lawrence Berkeley National Laboratory (United States)

  • Sanjay Mathur, Universität zu Köln (Germany)

  • Samuel T. Picraux, Los Alamos National Laboratory (United States)

  • Paola Prete, Istituto per la Microelettronica e Microsistemi (Italy)

  • Sharka M. Prokes, U.S. Naval Research Laboratory (United States)

  • Zhifeng Ren, Boston College (United States)

  • Atsuhito Sawabe, Aoyama Gakuin University (Japan)

  • Fred Semendy, U.S. Army Research Laboratory (United States)

  • Loucas Tsakalakos, GE Global Research (United States)

  • Emanuel Tutuc, The University of Texas at Austin (United States)

  • Lionel Vayssieres, Xi'an Jiaotong University (China)

  • George T. Wang, Sandia National Laboratories (United States)

Session Chairs

  • 1 2D Materials and Devices I

    Albert V. Davydov, National Institute of Standards and Technology (United States)

  • 2 2D Materials and Devices II

    Deji Akinwande, The University of Texas at Austin (United States)

  • 3 2D Materials and Devices III

    Nobuhiko Kobayashi, University of California, Santa Cruz (United States)

  • 4 Nanoionics for Energy and Computing

    A. Alec Talin, Sandia National Laboratories (United States)

  • 5 Integrated Nanoelectronics

    Babak Nikoobakht, National Institute of Science and Technology (United States)

  • 6 Nanowire and Quantum Dot LEDs

    George T. Wang, Sandia National Laboratories (United States)

  • 7 Nanostructured Si and Ge: Properties and Integration

    Necmi Biyikli, University of Connecticut (United States)

  • 8 Functional Nanostructures: Fabrication and Properties

    Patrick Vora, George Mason University (United States)

© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
} "Front Matter: Volume 10349", Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 1034901 (23 October 2017); doi: 10.1117/12.2286396; https://doi.org/10.1117/12.2286396

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