25 August 2017 Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes
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Abstract
Photodetectors (PDs) in datacom and computer networks where the link length is up to 300 m, need to handle higher than typical input power used in other communication links. Also, to reduce power consumption due to equalization at high speed (>25Gb/s), the datacom links will use PAM-4 signaling instead of NRZ with stringent receiver linearity requirements. Si PDs with photon-trapping micro/nanostructures are shown to have high linearity in output current verses input optical power. Though there is less silicon material due to the holes, the micro-/nanostructured holes collectively reradiate the light to an in-plane direction of the PD surface and can avoid current crowding in the PD. Consequently, the photocurrent per unit volume remains at a low level contributing to high linearity in the photocurrent. We present the effect of design and lattice patterns of micro/nanostructures on the linearity of ultra-fast silicon PDs designed for high speed multi gigabit data networks.
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Hilal Cansizoglu, Hilal Cansizoglu, Yang Gao, Yang Gao, Cesar Bartolo Perez, Cesar Bartolo Perez, Soroush Ghandiparsi, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Ekaterina Ponizovskaya Devine, Mehmet F. Cansizoglu, Mehmet F. Cansizoglu, Toshishige Yamada, Toshishige Yamada, Aly F. Elrefaie, Aly F. Elrefaie, Shih-Yuan Wang, Shih-Yuan Wang, M. Saif Islam, M. Saif Islam, } "Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes", Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103491C (25 August 2017); doi: 10.1117/12.2276612; https://doi.org/10.1117/12.2276612
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