ZnO: from material to unipolar devices (Conference Presentation)

Maxime Hugues; Nolwenn Le Biavan; Denis Lefebvre; Miguel Montes Bajo; Julen Tamayo-Arriola; Adrian Hierro; Arnaud Jollivet; Maria Tchernycheva; François H. Julien; Jean-Michel Chauveau

doi:10.1117/12.2277195

29 September 2017 ZnO: from material to unipolar devices (Conference Presentation)

Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrian Hierro, Arnaud Jollivet, Maria Tchernycheva, François H. Julien, Jean-Michel Chauveau

Author Affiliations +

Proceedings Volume 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017; 1035306 (2017) https://doi.org/10.1117/12.2277195
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

Although ZnO and its related heterostructures are really attractive for their potential application in optoelectronics, their developments have been limited by the p-type doping issue. Here, we will show why ZnO properties are also very attractive for unipolar structures, only dealing with electrons, and how the material quality has been improved to reach these devices requirements. First, the benefit of homoepitaxy through material quality improvement is presented. We will show that molecular beam epitaxy allows getting defect density, surface roughness, and residual doping, comparable to the state-of-the-art of GaAs. Moreover, (Zn,Mg)O alloy could be used to fabricate heterostructures with very good optical and transport properties. In the second part, we will give a brief overview of the main transport results, especially bidimensional electron gas, reported in the literature. Few examples of possible applications will also be addressed. Then, we will focus on the potentialities of nonpolar ZnO heterostructures for unipolar devices based on intersubband transitions. Once the advantages of using ZnO for TeraHertz quantum cascade laser discussed, we will show that the structural properties of the ZnO/(Zn,Mg)O heterostructures fulfill the requirements of these devices operation. Moreover, we will finish with absorption measurements clearly showing intersubband transitions in agreement with the light polarization selection rule. The strong influence of physical parameters, like doping level, on the energy of these kind of transitions will also be discussed. This work was funded by EU commission under the H2020 FET-OPEN program; project “ZOTERAC” FET-OPEN 6655107.

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Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrian Hierro, Arnaud Jollivet, Maria Tchernycheva, François H. Julien, and Jean-Michel Chauveau "ZnO: from material to unipolar devices (Conference Presentation)", Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 1035306 (29 September 2017); https://doi.org/10.1117/12.2277195

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KEYWORDS

Zinc oxide

Heterojunctions

Doping

Electrons

Gallium arsenide

Homoepitaxy

Molecular beam epitaxy

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