29 August 2017 III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics
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Abstract
We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semipolar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.
Conference Presentation
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R. Paiella, R. Paiella, H. Durmaz, H. Durmaz, F. F. Sudradjat, F. F. Sudradjat, D. Nothern, D. Nothern, G. C. Brummer, G. C. Brummer, W. Zhang, W. Zhang, J. Woodward, J. Woodward, T. D. Moustakas, T. D. Moustakas, } "III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics", Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 103530I (29 August 2017); doi: 10.1117/12.2274040; https://doi.org/10.1117/12.2274040
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