Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy

Manish Sharma; Pavan Kasanaboina; Shanthi Iyer

doi:10.1117/12.2274669

31 August 2017 Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy

Manish Sharma, Pavan Kasanaboina, Shanthi Iyer

Author Affiliations +

Proceedings Volume 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV; 103540F (2017) https://doi.org/10.1117/12.2274669
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

We report on the site-selective growth of >90% vertical GaAs nanowires (NWs) on Si (111) using self-assisted molecular beam epitaxy. The influences of growth parameters (pre-growth Ga opening time, V/III flux ratio) and processing conditions (reactive ion etching (RIE) and HF etching time) are investigated for different pitch lengths (200- 1000 nm) to achieve vertical NWs. The processing variables determine the removal of the native oxide layer and the contact angle of Ga-droplet inside the patterned hole that are critical to the vertical orientation of the NWs. Pre-growth Ga-opening time is found to be a crucial factor determining the size of the droplet in the patterned hole, while the V/III beam equivalent pressure (BEP) ratio influenced the occupancy of the holes due to the axial growth of NWs being group-V limited.

Citation Download Citation

Manish Sharma, Pavan Kasanaboina, and Shanthi Iyer "Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540F (31 August 2017); https://doi.org/10.1117/12.2274669

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