31 August 2017 Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy
Author Affiliations +
Abstract
We report on the site-selective growth of >90% vertical GaAs nanowires (NWs) on Si (111) using self-assisted molecular beam epitaxy. The influences of growth parameters (pre-growth Ga opening time, V/III flux ratio) and processing conditions (reactive ion etching (RIE) and HF etching time) are investigated for different pitch lengths (200- 1000 nm) to achieve vertical NWs. The processing variables determine the removal of the native oxide layer and the contact angle of Ga-droplet inside the patterned hole that are critical to the vertical orientation of the NWs. Pre-growth Ga-opening time is found to be a crucial factor determining the size of the droplet in the patterned hole, while the V/III beam equivalent pressure (BEP) ratio influenced the occupancy of the holes due to the axial growth of NWs being group-V limited.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manish Sharma, Manish Sharma, Pavan Kasanaboina, Pavan Kasanaboina, Shanthi Iyer, Shanthi Iyer, } "Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540F (31 August 2017); doi: 10.1117/12.2274669; https://doi.org/10.1117/12.2274669
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

Influence of Si doping on InAs GaAs quantum dot solar...
Proceedings of SPIE (February 23 2017)
Production of gallium arsenide IR windows
Proceedings of SPIE (December 06 1993)
Metamorphic InGaAs telecom lasers on GaAs
Proceedings of SPIE (February 03 2009)
GaAs-based tunnel junctions
Proceedings of SPIE (June 11 2003)

Back to Top