31 August 2017 MoS2 thin films prepared by sulfurization
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Abstract
Sulfurization of a Mo layer is one of the most used methods for preparation of thin MoS2 films. In the method, a sulfur powder and Mo covered substrate are placed in different positions within a furnace, and heated separately. This requires a furnace having at least two zones. Here, we present a simplified version of the method where a one-zone tube furnace was used. A molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800°C. Mo films transform into MoS2 in vapors of sulphur at high temperatures. As-prepared films were characterized by number of techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman, Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). It appears that one-zone sulfurization, with just one annealing temperature used, is a suitable method for fabrication of MoS2 thin films. This method is fast, cheap and easy to scale up.
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M. Sojková, M. Sojková, Š. Chromik, Š. Chromik, A. Rosová, A. Rosová, E. Dobročka, E. Dobročka, P. Hutár, P. Hutár, D. Machajdík, D. Machajdík, A. P. Kobzev, A. P. Kobzev, M. Hulman, M. Hulman, "MoS2 thin films prepared by sulfurization", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103541K (31 August 2017); doi: 10.1117/12.2273846; https://doi.org/10.1117/12.2273846
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