Advanced nano-imprint lithography appears as a simple, cost reduction in manufacturing, fast operation, develop-less patterning application compatible with conventional pattern transfer techniques such as ultraviolet and electron beam lithography. However, defects generated in nano-imprint lithography present challenges that must be resolved in order to mass-produce advanced devices. The nano-imprint lithography requires the clean separation of a quartz template from a resist material, and the force required to create this separation must be minimized to prevent the resist pattern collapse and defects. This procedure is proven to be suitable for material design and the process conditions of organic-inorganic hybrid resist materials on photo-reactive underlayer material for the defect reduction by mold contamination when the mold was removed from the organic-inorganic hybrid resist materials after ultraviolet irradiation. The developed organic-inorganic hybrid resist material with ultraviolet crosslinking groups produced high resolutions nano-patterning of 50 nm line and excellent etch properties for semiconductor memory, MEMS, NEMS, biosensors, and medical devices.